Bipolartransistor MJE712

• Typ: PNP
• Kollektor-Emitter-Spannung, max: -80 V
• Kollektor-Basis-Spannung, max: -80 V
• Emitter-Basis-Spannung, max: -5 V
• Kontinuierlicher Kollektor-Strom, max: -1.5 A
• Verlustleistung, max: 20 W
• Gleichstromverstärkung (h_fe): 40
• Lager- und Betriebstemperatur: -65 to +150 °C
• Gehäuse: TO-126

Hier ist ein Bild, das den Anschlussplan dieses Transistors zeigt.Der komplementäre NPN-Transistor zum MJE712 ist der MJE722.Der BCP53 (SOT-223), BCP53-10 (SOT-223), BCP53-16 (SOT-223), BCX53 (SOT-89), BCX53-10 (SOT-89), BCX53-16 (SOT-89), BSP32 (SOT-223), BSP33 (SOT-223), BSP62 (SOT-223), BSP62T1 (SOT-223), BSP62T1G (SOT-223), BSP62T3 (SOT-223), BSP62T3G (SOT-223), BSR32 (SOT-89), BSR33 (SOT-89) und MMBT4356 (SOT-23) ist die SMD-Version des MJE712-Transistors.Sie können den Transistor MJE712 durch einen 2N6036, 2N6036G, 2SA1021, 2SA1021-O, 2SA1021-R, 2SA1021-Y, 2SA1249, 2SA1249-R, 2SA1249-S, 2SA1249-T, 2SA1408, 2SA1408-O, 2SA1408-R, 2SA1507, 2SA1507-R, 2SA1507-S, 2SA1507-T, 2SB1067, 2SB1144, 2SB1144-Q, 2SB1144-S, 2SB1144-T, 2SB1149, 2SB1149-K, 2SB1149-L, 2SB1149-M, 2SB1167, 2SB1167-Q, 2SB1167-R, 2SB1167-S, 2SB1167-T, 2SB1168, 2SB1168-Q, 2SB1168-R, 2SB1168-S, 2SB1168-T, 2SB649, 2SB649-B, 2SB649-C, 2SB649-D, 2SB649A, 2SB649A-B, 2SB649A-C, 2SB795, 2SB795-K, 2SB795-L, 2SB795-M, BD140, BD140-10, BD140-16, BD140-6, BD140G, BD170, BD180, BD180-10, BD180-6, BD180G, BD231, BD238, BD238G, BD380, BD380-10, BD380-16, BD380-25, BD380-6, BD442, BD442G, BD680, BD680A, BD680AG, BD680G, BD682, BD682G, BD780, BD790, BD792, KSB1149, KSB1149-G, KSB1149-O, KSB1149-Y, KSB795, KSB795-O, KSB795-R, KSB795-Y, KSE172, KSE702, KSE703, KTA1700, KTA1700-O, KTA1700-Y, MJE172, MJE172G, MJE250, MJE251, MJE253, MJE253G, MJE271, MJE271G, MJE702, MJE702G, MJE703, MJE703G oder TTA004b ersetzen.