Transistor bipolar BDT60
Características del transistor BDT60
- Tipo: PNP
- Tensión Máxima Colector-Emisor: -60 V
- Tensión Máxima Colector-Base: -60 V
- Tensión Máxima Emisor-Base: -5 V
- Corriente DC Máxima del Colector: -4 A
- Disipación de Potencia Máxima: 50 W
- Ganancia de corriente continua (hfe): 750
- Temperatura de almacenamiento y funcionamiento: -65 to +150 °C
- Encapsulado: TO-220
Diagrama de pines del BDT60
Aquí hay una imagen que muestra el diagrama de pines de este transistor.
Transistor NPN complementario
El transistor
NPN complementario del BDT60 es el
BDT61.
Sustitución y equivalentes para el transistor BDT60
Puede sustituir el BDT60 por el
2N6040,
2N6040G,
2N6041,
2N6041G,
2N6042,
2N6042G,
2N6667,
2N6667G,
2N6668,
2N6668G,
2SA1259,
2SB1020,
2SB1020A,
2SB1024,
2SB1223,
2SB1224,
2SB1225,
2SB1227,
2SB1228,
2SB1251,
2SB1251-P,
2SB1251-Q,
2SB1252,
2SB1252-P,
2SB1252-Q,
2SB1481,
2SB1626,
2SB1626-O,
2SB1626-P,
2SB1626-Y,
2SB601,
2SB601-K,
2SB601-L,
2SB601-M,
2SB673,
2SB674,
2SB675,
2SB751,
2SB751-P,
2SB751-Q,
2SB751-R,
2SB751A,
2SB751A-P,
2SB751A-Q,
2SB751A-R,
2SB880,
2SB881,
2SB882,
2SB885,
2SB886,
2SB950,
2SB950-P,
2SB950-Q,
2SB950A,
2SB950A-P,
2SB950A-Q,
2SB951,
2SB951-P,
2SB951-Q,
2SB951A,
2SB951A-P,
2SB951A-Q,
BD646,
BD648,
BD650,
BD652,
BD898,
BD898A,
BD900,
BD900A,
BD902,
BDT60A,
BDT60B,
BDT60C,
BDT62,
BDT62A,
BDT62B,
BDT62C,
BDT64,
BDT64A,
BDT64B,
BDT64C,
BDW24A,
BDW24B,
BDW24C,
BDW45,
BDW46,
BDW46G,
BDW47,
BDW47G,
BDW48,
BDW54A,
BDW54B,
BDW54C,
BDW54D,
BDW64A,
BDW64B,
BDW64C,
BDW64D,
BDW74A,
BDW74B,
BDW74C,
BDW74D,
BDW94A,
BDW94B,
BDW94C,
BDW94CF,
BDX34A,
BDX34B,
BDX34BG,
BDX34C,
BDX34CG,
BDX34D,
BDX54A,
BDX54B,
BDX54BG,
BDX54C,
BDX54CG,
MJE700T,
MJE701T,
MJE702T,
MJE703T,
MJF127,
MJF127G,
MJF6668,
MJF6668G,
TIP105,
TIP105G,
TIP106,
TIP106G,
TIP107,
TIP107G,
TIP125,
TIP125G,
TIP126,
TIP126G,
TIP127,
TIP127G,
TIP135,
TIP135G,
TIP136,
TIP136G,
TIP137,
TIP137G,
TIP145T,
TIP146T,
TIP147T o
TTB1020B.
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