Transistor bipolar MJE801T

• Tipo: NPN
• Tensión Máxima Colector-Emisor: 60 V
• Tensión Máxima Colector-Base: 60 V
• Tensión Máxima Emisor-Base: 5 V
• Corriente DC Máxima del Colector: 4 A
• Disipación de Potencia Máxima: 50 W
• Ganancia de corriente continua (h_fe): 750
• Temperatura de almacenamiento y funcionamiento: -55 to +150 °C
• Encapsulado: TO-220

Aquí hay una imagen que muestra el diagrama de pines de este transistor.El transistor PNP complementario del MJE801T es el MJE701T.Puede sustituir el MJE801T por el 2N6043, 2N6043G, 2N6044, 2N6044G, 2N6045, 2N6045G, 2N6387, 2N6387G, 2N6388, 2N6388G, 2N6530, 2N6532, 2SC3145, 2SD1190, 2SD1191, 2SD1192, 2SD1195, 2SD1196, 2SD1276, 2SD1276-P, 2SD1276-Q, 2SD1276A, 2SD1276A-P, 2SD1276A-Q, 2SD1277, 2SD1277-P, 2SD1277-Q, 2SD1277A, 2SD1277A-P, 2SD1277A-Q, 2SD1414, 2SD1415, 2SD1415A, 2SD1825, 2SD1826, 2SD1827, 2SD1829, 2SD1830, 2SD1891, 2SD1891-P, 2SD1891-Q, 2SD1892, 2SD1892-P, 2SD1892-Q, 2SD2241, 2SD2495, 2SD2495-O, 2SD2495-P, 2SD2495-Y, 2SD560, 2SD560-KB, 2SD560-LB, 2SD560-MB, 2SD633, 2SD634, 2SD635, 2SD837, 2SD837-P, 2SD837-Q, 2SD837-R, 2SD837A, 2SD837A-P, 2SD837A-Q, 2SD837A-R, BD645, BD647, BD649, BD651, BD897, BD897A, BD899, BD899A, BD901, BDT61, BDT61A, BDT61B, BDT61C, BDT63, BDT63A, BDT63B, BDT63C, BDT65, BDT65A, BDT65B, BDT65C, BDW23A, BDW23B, BDW23C, BDW40, BDW41, BDW41G, BDW42, BDW42G, BDW43, BDW53A, BDW53B, BDW53C, BDW53D, BDW63A, BDW63B, BDW63C, BDW63D, BDW73A, BDW73B, BDW73C, BDW73D, BDW93A, BDW93B, BDW93C, BDW93CF, BDX33A, BDX33B, BDX33BG, BDX33C, BDX33CG, BDX33D, BDX53A, BDX53B, BDX53BG, BDX53C, BDX53CG, KSB601, KSB601-O, KSB601-R, KSB601-Y, KSD560, KSD560-O, KSD560-R, KSD560-Y, MJE800T, MJE802T, MJE803T, MJF122, MJF122G, MJF6388, MJF6388G, TIP100, TIP100G, TIP101, TIP101G, TIP102, TIP102G, TIP120, TIP120G, TIP121, TIP121G, TIP122, TIP122G, TIP130, TIP130G, TIP131, TIP131G, TIP132, TIP132G, TIP140T, TIP141T, TIP142T o TTD1415B.