2SB751A-R Bipolar Transistor

Characteristics of 2SB751A-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 1000 to 2500
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB751A-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB751A-R transistor can have a current gain of 1000 to 2500. The gain of the 2SB751A will be in the range from 1000 to 10000, for the 2SB751A-P it will be in the range from 4000 to 10000, for the 2SB751A-Q it will be in the range from 2000 to 5000.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB751A-R might only be marked "B751A-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB751A-R is the 2SD837A-R.

Replacement and Equivalent for 2SB751A-R transistor

You can replace the 2SB751A-R with the 2N6041, 2N6041G, 2N6042, 2N6042G, 2N6668, 2N6668G, 2SA1488A, 2SA771, 2SB1481, BD244B, BD244C, BD538, BD540B, BD540C, BD544B, BD544C, BD546B, BD546C, BD648, BD650, BD652, BD800, BD802, BD810, BD900, BD900A, BD902, BD952, BD954, BD956, BDT60A, BDT60B, BDT60C, BDT62A, BDT62B, BDT62C, BDT64A, BDT64B, BDT64C, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW24B, BDW24C, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDW54B, BDW54C, BDW54D, BDW64B, BDW64C, BDW64D, BDW74B, BDW74C, BDW74D, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54B, BDX54BG, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, BDX78, D44C10, D44C11, D44C12, D45C10, D45C11, D45C12, D45H11, D45H11FP, MJE15029, MJE15029G, MJE15031, MJE15031G, MJE702T, MJE703T, MJF15031, MJF15031G, TIP106, TIP106G, TIP107, TIP107G, TIP126, TIP126G, TIP127, TIP127G, TIP136, TIP136G, TIP137, TIP137G, TIP146T or TIP147T.
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