BDW54D Bipolar Transistor

Characteristics of BDW54D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW54D

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDW54D is the BDW53D.

Replacement and Equivalent for BDW54D transistor

You can replace the BDW54D with the BD652, BD956, BDT60C, BDT88, BDT88F, BDW64D, BDW74D, BDX34D, BDX54D, BDX54E, BDX54F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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