BDT64B Bipolar Transistor

Characteristics of BDT64B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT64B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT64B is the BDT65B.

Replacement and Equivalent for BDT64B transistor

You can replace the BDT64B with the BDT64C, BDW47, BDW47G, BDW48, MJF6668 or MJF6668G.
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