BDT64B Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -100 V
• Collector-Base Voltage, max: -100 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -12 A
• Collector Dissipation: 125 W
• DC Current Gain (h_fe): 1000
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-220

Here is an image showing the pin diagram of this transistor.The complementary NPN transistor to the BDT64B is the BDT65B.You can replace the BDT64B with the BDT64C, BDW47, BDW47G, BDW48, MJF6668 or MJF6668G.