BD900A Bipolar Transistor
Characteristics of BD900A Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 70 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BD900A
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
The complementary
NPN transistor to the BD900A is the
BD899A.
Replacement and Equivalent for BD900A transistor
You can replace the BD900A with the
2N6041,
2N6041G,
2N6042,
2N6042G,
2N6668,
2N6668G,
2SB1228,
2SB886,
2SB951A,
2SB951A-P,
2SB951A-Q,
BD648,
BD650,
BD652,
BD900,
BD902,
BDT62A,
BDT62B,
BDT62C,
BDT64A,
BDT64B,
BDT64C,
BDW46,
BDW46G,
BDW47,
BDW47G,
BDW48,
BDW74B,
BDW74C,
BDW74D,
BDW94B,
BDW94C,
BDW94CF,
BDX34B,
BDX34BG,
BDX34C,
BDX34CG,
BDX34D,
BDX54B,
BDX54BG,
BDX54C,
BDX54CG,
MJF6668,
MJF6668G,
TIP106,
TIP106G,
TIP107,
TIP107G,
TIP136,
TIP136G,
TIP137,
TIP137G,
TIP146T or
TIP147T.
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