BDX54F Bipolar Transistor
Characteristics of BDX54F Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -160 V
- Collector-Base Voltage, max: -160 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 60 W
- DC Current Gain (hfe): 500
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDX54F
Complementary NPN transistor
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