2N6668G Bipolar Transistor
Characteristics of 2N6668G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 65 W
- DC Current Gain (hfe): 1000 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The 2N6668G is the lead-free version of the 2N6668 transistor
Pinout of 2N6668G
Equivalent circuit
Complementary NPN transistor
Replacement and Equivalent for 2N6668G transistor
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