BD650 Bipolar Transistor

Characteristics of BD650 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 62.5 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD650

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD650 is the BD649.

Replacement and Equivalent for BD650 transistor

You can replace the BD650 with the 2N6042, 2N6042G, 2SB1228, 2SB886, BD652, BD902, BDT62B, BDT62C, BDT64B, BDT64C, BDW47, BDW47G, BDW48, BDW74C, BDW74D, BDW94C, BDW94CF, BDX34C, BDX34CG, BDX34D, BDX54C, BDX54CG, MJF6668, MJF6668G, TIP107, TIP107G, TIP137, TIP137G or TIP147T.
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