BD648 Bipolar Transistor
Characteristics of BD648 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 62.5 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BD648
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
The complementary
NPN transistor to the BD648 is the
BD647.
Replacement and Equivalent for BD648 transistor
You can replace the BD648 with the
2N6041,
2N6041G,
2N6042,
2N6042G,
2N6668,
2N6668G,
2SB1228,
2SB886,
2SB951A,
2SB951A-P,
2SB951A-Q,
BD650,
BD652,
BD900,
BD900A,
BD902,
BDT62A,
BDT62B,
BDT62C,
BDT64A,
BDT64B,
BDT64C,
BDW46,
BDW46G,
BDW47,
BDW47G,
BDW48,
BDW74B,
BDW74C,
BDW74D,
BDW94B,
BDW94C,
BDW94CF,
BDX34B,
BDX34BG,
BDX34C,
BDX34CG,
BDX34D,
BDX54B,
BDX54BG,
BDX54C,
BDX54CG,
MJF6668,
MJF6668G,
TIP106,
TIP106G,
TIP107,
TIP107G,
TIP136,
TIP136G,
TIP137,
TIP137G,
TIP146T or
TIP147T.
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