BDT60B Bipolar Transistor

Characteristics of BDT60B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 50 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT60B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT60B is the BDT61B.

Replacement and Equivalent for BDT60B transistor

You can replace the BDT60B with the 2N6042, 2N6042G, 2SB1020, 2SB1020A, 2SB1227, 2SB1228, 2SB1252, 2SB1252-P, 2SB1252-Q, 2SB1481, 2SB1626, 2SB1626-O, 2SB1626-P, 2SB1626-Y, 2SB601, 2SB601-K, 2SB601-L, 2SB601-M, 2SB673, 2SB885, 2SB886, BD650, BD652, BD902, BDT60C, BDT62B, BDT62C, BDT64B, BDT64C, BDW24C, BDW47, BDW47G, BDW48, BDW54C, BDW54D, BDW64C, BDW64D, BDW74C, BDW74D, BDW94C, BDW94CF, BDX34C, BDX34CG, BDX34D, BDX54C, BDX54CG, MJF127, MJF127G, MJF6668, MJF6668G, TIP107, TIP107G, TIP127, TIP127G, TIP137, TIP137G, TIP147T or TTB1020B.
If you find an error please send an email to mail@el-component.com