BDT60B Bipolar Transistor
Characteristics of BDT60B Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -4 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT60B
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
The complementary
NPN transistor to the BDT60B is the
BDT61B.
Replacement and Equivalent for BDT60B transistor
You can replace the BDT60B with the
2N6042,
2N6042G,
2SB1020,
2SB1020A,
2SB1227,
2SB1228,
2SB1252,
2SB1252-P,
2SB1252-Q,
2SB1481,
2SB1626,
2SB1626-O,
2SB1626-P,
2SB1626-Y,
2SB601,
2SB601-K,
2SB601-L,
2SB601-M,
2SB673,
2SB885,
2SB886,
BD650,
BD652,
BD902,
BDT60C,
BDT62B,
BDT62C,
BDT64B,
BDT64C,
BDW24C,
BDW47,
BDW47G,
BDW48,
BDW54C,
BDW54D,
BDW64C,
BDW64D,
BDW74C,
BDW74D,
BDW94C,
BDW94CF,
BDX34C,
BDX34CG,
BDX34D,
BDX54C,
BDX54CG,
MJF127,
MJF127G,
MJF6668,
MJF6668G,
TIP107,
TIP107G,
TIP127,
TIP127G,
TIP137,
TIP137G,
TIP147T or
TTB1020B.
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