MJE15029G Bipolar Transistor
Characteristics of MJE15029G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -120 V
- Collector-Base Voltage, max: -120 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The MJE15029G is the lead-free version of the MJE15029 transistor
Pinout of MJE15029G
Complementary NPN transistor
Replacement and Equivalent for MJE15029G transistor
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