BDX54E Bipolar Transistor

Characteristics of BDX54E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 500
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDX54E

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDX54E is the BDX53E.

Replacement and Equivalent for BDX54E transistor

You can replace the BDX54E with the BDX54F.
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