BDT88F Bipolar Transistor

Characteristics of BDT88F Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 36 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT88F

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT88F is the BDT87F.

Replacement and Equivalent for BDT88F transistor

You can replace the BDT88F with the BDT88, BDW48, FJP1943, FJP1943O, FJP1943R, FJPF1943, FJPF1943O or FJPF1943R.
If you find an error please send an email to mail@el-component.com