BD900 Bipolar Transistor
Characteristics of BD900 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 70 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BD900
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
The complementary
NPN transistor to the BD900 is the
BD899.
Replacement and Equivalent for BD900 transistor
You can replace the BD900 with the
2N6041,
2N6041G,
2N6042,
2N6042G,
2N6668,
2N6668G,
2SB1228,
2SB886,
2SB951A,
2SB951A-P,
2SB951A-Q,
BD648,
BD650,
BD652,
BD900A,
BD902,
BDT62A,
BDT62B,
BDT62C,
BDT64A,
BDT64B,
BDT64C,
BDW46,
BDW46G,
BDW47,
BDW47G,
BDW48,
BDW74B,
BDW74C,
BDW74D,
BDW94B,
BDW94C,
BDW94CF,
BDX34B,
BDX34BG,
BDX34C,
BDX34CG,
BDX34D,
BDX54B,
BDX54BG,
BDX54C,
BDX54CG,
MJF6668,
MJF6668G,
TIP106,
TIP106G,
TIP107,
TIP107G,
TIP136,
TIP136G,
TIP137,
TIP137G,
TIP146T or
TIP147T.
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