BD900 Bipolar Transistor

Characteristics of BD900 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 750
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD900

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD900 is the BD899.

Replacement and Equivalent for BD900 transistor

You can replace the BD900 with the 2N6041, 2N6041G, 2N6042, 2N6042G, 2N6668, 2N6668G, 2SB1228, 2SB886, 2SB951A, 2SB951A-P, 2SB951A-Q, BD648, BD650, BD652, BD900A, BD902, BDT62A, BDT62B, BDT62C, BDT64A, BDT64B, BDT64C, BDW46, BDW46G, BDW47, BDW47G, BDW48, BDW74B, BDW74C, BDW74D, BDW94B, BDW94C, BDW94CF, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54B, BDX54BG, BDX54C, BDX54CG, MJF6668, MJF6668G, TIP106, TIP106G, TIP107, TIP107G, TIP136, TIP136G, TIP137, TIP137G, TIP146T or TIP147T.
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