BD802 Bipolar Transistor
Characteristics of BD802 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -8 A
- Collector Dissipation: 65 W
- DC Current Gain (hfe): 30
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of BD802
Complementary NPN transistor
Replacement and Equivalent for BD802 transistor
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