BDT86F Bipolar Transistor
Characteristics of BDT86F Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -100 V
- Emitter-Base Voltage, max: -7 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 36 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220F
Pinout of BDT86F
Complementary NPN transistor
Replacement and Equivalent for BDT86F transistor
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