BD810 Bipolar Transistor
Characteristics of BD810 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -10 A
- Collector Dissipation: 90 W
- DC Current Gain (hfe): 30
- Transition Frequency, min: 2 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of BD810
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
The complementary
NPN transistor to the BD810 is the
BD809.
Replacement and Equivalent for BD810 transistor
You can replace the BD810 with the
2N6668,
2N6668G,
2SA1077,
2SA1329,
2SA1329-O,
2SA1329-Y,
2SA1452,
2SA1452-O,
2SA1452-Y,
2SA1452A,
2SA1452A-O,
2SA1452A-Y,
BD546B,
BD546C,
BDT62A,
BDT62B,
BDT62C,
BDT64A,
BDT64B,
BDT64C,
BDT84,
BDT84F,
BDT86,
BDT86F,
BDT88,
BDT88F,
BDW46,
BDW46G,
BDW47,
BDW47G,
BDW48,
BDW94B,
BDW94C,
BDW94CF,
BDX34B,
BDX34BG,
BDX34C,
BDX34CG,
BDX34D,
D45H11,
D45H11FP,
MJF6668,
MJF6668G,
TIP146T,
TIP147T,
TTA1452B or
TTB1452B.
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