BDW64C Bipolar Transistor

Characteristics of BDW64C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW64C

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDW64C is the BDW63C.

Replacement and Equivalent for BDW64C transistor

You can replace the BDW64C with the BD244C, BD544C, BD546C, BD650, BD652, BD802, BD902, BDT86, BDT86F, BDT88, BDT88F, BDW24C, BDW64D, BDW74C, BDW74D, BDX34C, BDX34CG, BDX34D, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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