BDT86 Bipolar Transistor

Characteristics of BDT86 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT86

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT86 is the BDT85.

Replacement and Equivalent for BDT86 transistor

You can replace the BDT86 with the BD546C, BDT86F, BDT88, BDT88F, BDW47, BDW47G, BDW48, MJF6668 or MJF6668G.
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