BDW64B Bipolar Transistor

Characteristics of BDW64B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 750 to 20000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDW64B

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDW64B is the BDW63B.

Replacement and Equivalent for BDW64B transistor

You can replace the BDW64B with the 2SA771, BD244B, BD244C, BD538, BD544B, BD544C, BD546B, BD546C, BD648, BD650, BD652, BD800, BD802, BD810, BD900, BD900A, BD902, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDW24B, BDW24C, BDW64C, BDW64D, BDW74B, BDW74C, BDW74D, BDX34B, BDX34BG, BDX34C, BDX34CG, BDX34D, BDX54B, BDX54BG, BDX54C, BDX54CG, BDX54D, BDX54E, BDX54F, BDX78, D45H11, D45H11FP, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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