BDW64B Bipolar Transistor
Characteristics of BDW64B Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -6 A
- Collector Dissipation: 60 W
- DC Current Gain (hfe): 750 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDW64B
Here is an image showing the pin diagram of this transistor.
Complementary NPN transistor
The complementary
NPN transistor to the BDW64B is the
BDW63B.
Replacement and Equivalent for BDW64B transistor
You can replace the BDW64B with the
2SA771,
BD244B,
BD244C,
BD538,
BD544B,
BD544C,
BD546B,
BD546C,
BD648,
BD650,
BD652,
BD800,
BD802,
BD810,
BD900,
BD900A,
BD902,
BDT84,
BDT84F,
BDT86,
BDT86F,
BDT88,
BDT88F,
BDW24B,
BDW24C,
BDW64C,
BDW64D,
BDW74B,
BDW74C,
BDW74D,
BDX34B,
BDX34BG,
BDX34C,
BDX34CG,
BDX34D,
BDX54B,
BDX54BG,
BDX54C,
BDX54CG,
BDX54D,
BDX54E,
BDX54F,
BDX78,
D45H11,
D45H11FP,
MJE15029,
MJE15029G,
MJE15031,
MJE15031G,
MJF15031 or
MJF15031G.
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