2SA1476-D Bipolar Transistor

Characteristics of 2SA1476-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -0.2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 400 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1476-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1476-D transistor can have a current gain of 60 to 120. The gain of the 2SA1476 will be in the range from 40 to 320, for the 2SA1476-C it will be in the range from 40 to 80, for the 2SA1476-E it will be in the range from 100 to 200, for the 2SA1476-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1476-D might only be marked "A1476-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1476-D is the 2SC3782-D.

SMD Version of 2SA1476-D transistor

The BST15 (SOT-89) is the SMD version of the 2SA1476-D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1476-D transistor

You can replace the 2SA1476-D with the 2SA1006A, 2SA1006A-R, 2SA1006B, 2SA1006B-R, 2SA1009, 2SA1009-J, 2SA1009A, 2SA1009A-J, 2SA1668, 2SB630, 2SB630-R, FJP1943, FJPF1943, MJE15033, MJE15033G, MJE5730, MJE5730G, MJE5731, MJE5731A, MJE5731AG, MJE5731G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
If you find an error please send an email to mail@el-component.com