MJE5850 Bipolar Transistor

Characteristics of MJE5850 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -350 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 15
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5850

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5850 transistor

You can replace the MJE5850 with the MJE15035, MJE15035G, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.

Lead-free Version

The MJE5850G transistor is the lead-free version of the MJE5850.
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