2SA1476-E Bipolar Transistor

Characteristics of 2SA1476-E Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -0.2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 400 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1476-E

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1476-E transistor can have a current gain of 100 to 200. The gain of the 2SA1476 will be in the range from 40 to 320, for the 2SA1476-C it will be in the range from 40 to 80, for the 2SA1476-D it will be in the range from 60 to 120, for the 2SA1476-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1476-E might only be marked "A1476-E".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1476-E is the 2SC3782-E.

Replacement and Equivalent for 2SA1476-E transistor

You can replace the 2SA1476-E with the 2SA1006A, 2SA1006A-Q, 2SA1006B, 2SA1006B-Q, 2SA1009, 2SA1009-H, 2SA1009A, 2SA1009A-H, 2SA1306B, 2SA1668, 2SA1837, 2SA968B, 2SB630, 2SB630-Q, MJE15033, MJE15033G, MJE15035, MJE15035G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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