MJE5852G Bipolar Transistor

Characteristics of MJE5852G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -450 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 15
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE5852G is the lead-free version of the MJE5852 transistor

Pinout of MJE5852G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5852G transistor

You can replace the MJE5852G with the MJE5852.
If you find an error please send an email to mail@el-component.com