MJE5851 Bipolar Transistor

Characteristics of MJE5851 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -350 V
  • Collector-Base Voltage, max: -400 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 15
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5851

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5851 transistor

You can replace the MJE5851 with the MJE15035, MJE15035G, MJE5851G, MJE5852 or MJE5852G.

Lead-free Version

The MJE5851G transistor is the lead-free version of the MJE5851.
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