MJE5731 Bipolar Transistor

Characteristics of MJE5731 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -350 V
  • Collector-Base Voltage, max: -350 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5731

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5731 transistor

You can replace the MJE5731 with the 2SA1009, 2SA1009A, MJE5731A, MJE5731AG, MJE5731G, MJE5851, MJE5851G, MJE5852 or MJE5852G.

Lead-free Version

The MJE5731G transistor is the lead-free version of the MJE5731.
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