2SB630-R Bipolar Transistor

Characteristics of 2SB630-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB630-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB630-R transistor can have a current gain of 60 to 120. The gain of the 2SB630 will be in the range from 40 to 200, for the 2SB630-Q it will be in the range from 100 to 200, for the 2SB630-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB630-R might only be marked "B630-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB630-R is the 2SD610-R.

Replacement and Equivalent for 2SB630-R transistor

You can replace the 2SB630-R with the 2SA1009, 2SA1009-J, 2SA1009A, 2SA1009A-J, 2SA1668, FJP1943, FJPF1943, MJE15033, MJE15033G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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