MJE5730G Bipolar Transistor

Characteristics of MJE5730G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE5730G is the lead-free version of the MJE5730 transistor

Pinout of MJE5730G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5730G transistor

You can replace the MJE5730G with the 2SA1009, 2SA1009A, MJE5730, MJE5731, MJE5731A, MJE5731AG, MJE5731G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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