2SA1006B Bipolar Transistor

Characteristics of 2SA1006B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -250 V
  • Collector-Base Voltage, max: -250 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 60 to 320
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1006B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1006B transistor can have a current gain of 60 to 320. The gain of the 2SA1006B-P will be in the range from 160 to 320, for the 2SA1006B-Q it will be in the range from 100 to 200, for the 2SA1006B-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1006B might only be marked "A1006B".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1006B is the 2SC2336B.

Replacement and Equivalent for 2SA1006B transistor

You can replace the 2SA1006B with the MJE15033, MJE15033G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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