2SA1006B Bipolar Transistor
Characteristics of 2SA1006B Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -250 V
- Collector-Base Voltage, max: -250 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1.5 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 60 to 320
- Transition Frequency, min: 80 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of 2SA1006B
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SA1006B transistor
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