MJE5731G Bipolar Transistor
Characteristics of MJE5731G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -350 V
- Collector-Base Voltage, max: -350 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -1 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 30 to 150
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
- The MJE5731G is the lead-free version of the MJE5731 transistor
Pinout of MJE5731G
Replacement and Equivalent for MJE5731G transistor
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