MJE5731AG Bipolar Transistor

Characteristics of MJE5731AG Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -375 V
  • Collector-Base Voltage, max: -375 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE5731AG is the lead-free version of the MJE5731A transistor

Pinout of MJE5731AG

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5731AG transistor

You can replace the MJE5731AG with the 2SA1009A, MJE5731A, MJE5852 or MJE5852G.
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