MJE5850G Bipolar Transistor

Characteristics of MJE5850G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -350 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 15
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The MJE5850G is the lead-free version of the MJE5850 transistor

Pinout of MJE5850G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5850G transistor

You can replace the MJE5850G with the MJE15035, MJE15035G, MJE5850, MJE5851, MJE5851G, MJE5852 or MJE5852G.
If you find an error please send an email to mail@el-component.com