2SA1476-C Bipolar Transistor

Characteristics of 2SA1476-C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -0.2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 400 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1476-C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1476-C transistor can have a current gain of 40 to 80. The gain of the 2SA1476 will be in the range from 40 to 320, for the 2SA1476-D it will be in the range from 60 to 120, for the 2SA1476-E it will be in the range from 100 to 200, for the 2SA1476-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1476-C might only be marked "A1476-C".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1476-C is the 2SC3782-C.

SMD Version of 2SA1476-C transistor

The BST15 (SOT-89) is the SMD version of the 2SA1476-C transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SA1476-C transistor

You can replace the 2SA1476-C with the 2SA1009, 2SA1009-K, 2SA1009A, 2SA1009A-K, 2SB630, 2SB630-S, MJE5730, MJE5730G, MJE5731, MJE5731A, MJE5731AG, MJE5731G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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