MJE5730 Bipolar Transistor

Characteristics of MJE5730 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 30 to 150
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5730

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5730 transistor

You can replace the MJE5730 with the 2SA1009, 2SA1009A, MJE5730G, MJE5731, MJE5731A, MJE5731AG, MJE5731G, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.

Lead-free Version

The MJE5730G transistor is the lead-free version of the MJE5730.
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