MJE5851G Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -350 V
• Collector-Base Voltage, max: -400 V
• Emitter-Base Voltage, max: -6 V
• Collector Current − Continuous, max: -8 A
• Collector Dissipation: 80 W
• DC Current Gain (h_fe): 15
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-220
• The MJE5851G is the lead-free version of the MJE5851 transistor

Here is an image showing the pin diagram of this transistor.You can replace the MJE5851G with the MJE15035, MJE15035G, MJE5851, MJE5852 or MJE5852G.