2SA1009 Bipolar Transistor

Characteristics of 2SA1009 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -350 V
  • Collector-Base Voltage, max: -350 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 20 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1009

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1009 transistor can have a current gain of 20 to 200. The gain of the 2SA1009-H will be in the range from 100 to 200, for the 2SA1009-J it will be in the range from 60 to 120, for the 2SA1009-K it will be in the range from 40 to 80, for the 2SA1009-L it will be in the range from 30 to 60, for the 2SA1009-M it will be in the range from 20 to 40.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1009 might only be marked "A1009".

Replacement and Equivalent for 2SA1009 transistor

You can replace the 2SA1009 with the 2SA1009A, MJE5851, MJE5851G, MJE5852 or MJE5852G.
If you find an error please send an email to mail@el-component.com