2SB630 Bipolar Transistor

Characteristics of 2SB630 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -200 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 40 to 200
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB630

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB630 transistor can have a current gain of 40 to 200. The gain of the 2SB630-Q will be in the range from 100 to 200, for the 2SB630-R it will be in the range from 60 to 120, for the 2SB630-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB630 might only be marked "B630".

Complementary NPN transistor

The complementary NPN transistor to the 2SB630 is the 2SD610.

Replacement and Equivalent for 2SB630 transistor

You can replace the 2SB630 with the 2SA1009, 2SA1009A, MJE5850, MJE5850G, MJE5851, MJE5851G, MJE5852 or MJE5852G.
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