MJE5852 Bipolar Transistor

Characteristics of MJE5852 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -400 V
  • Collector-Base Voltage, max: -450 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 15
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of MJE5852

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MJE5852 transistor

You can replace the MJE5852 with the MJE5852G.

Lead-free Version

The MJE5852G transistor is the lead-free version of the MJE5852.
If you find an error please send an email to mail@el-component.com