2SA1008M Bipolar Transistor

Characteristics of 2SA1008M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SA1008M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1008M transistor can have a current gain of 40 to 80. The gain of the 2SA1008 will be in the range from 40 to 200, for the 2SA1008K it will be in the range from 100 to 200, for the 2SA1008L it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1008M might only be marked "A1008M".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1008M is the 2SC2331M.

Replacement and Equivalent for 2SA1008M transistor

You can replace the 2SA1008M with the 2N6475, 2N6476, 2SA1010, 2SA1010M, 2SB1016, 2SB1016-R, 2SB1090, 2SB1090-M, 2SB1367, 2SB1367-R, 2SB546, 2SB546-R, 2SB546A, 2SB546A-M, 2SB547, 2SB595, 2SB595-R, 2SB630, 2SB630-S, 2SB703A, 2SB703A-S, 2SB995, 2SB995-R, BD240C, BD242C, BD244C, BD540C, BD712, BD744C, BD802, BD912, BD940, BD940F, BD942, BD942F, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, KSA1010, KSA1010R, KSB546, KSB546-R, KTB1367, KTB1367R, MJE15029, MJE15029G, MJE15031, MJE15031G, MJE5170, MJE5171, MJE5172, MJF15031, MJF15031G or NTE292.
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