2N6476 Bipolar Transistor

Characteristics of 2N6476 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 15 to 150
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N6476

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the 2N6476 is the 2N6474.

Replacement and Equivalent for 2N6476 transistor

You can replace the 2N6476 with the NTE292.
If you find an error please send an email to mail@el-component.com