2SB546-R Bipolar Transistor

Characteristics of 2SB546-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB546-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB546-R transistor can have a current gain of 40 to 80. The gain of the 2SB546 will be in the range from 40 to 240, for the 2SB546-O it will be in the range from 70 to 140, for the 2SB546-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB546-R might only be marked "B546-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB546-R is the 2SD401-R.

Replacement and Equivalent for 2SB546-R transistor

You can replace the 2SB546-R with the 2SB546A, 2SB546A-M, 2SB547, 2SB630, 2SB630-S, KSB546, KSB546-R, MJE15031, MJE15031G, MJE5172, MJE5850, MJE5850G, MJF15031 or MJF15031G.
If you find an error please send an email to mail@el-component.com