KTB1367 Bipolar Transistor

Characteristics of KTB1367 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 40 to 240
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular 2SB1367 transistor

Pinout of KTB1367

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB1367 transistor can have a current gain of 40 to 240. The gain of the KTB1367O will be in the range from 70 to 140, for the KTB1367R it will be in the range from 40 to 80, for the KTB1367Y it will be in the range from 120 to 240.

Complementary NPN transistor

The complementary NPN transistor to the KTB1367 is the KTD2059.

SMD Version of KTB1367 transistor

The BDP954 (SOT-223) is the SMD version of the KTB1367 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTB1367 transistor

You can replace the KTB1367 with the 2SB1016, 2SB1367, 2SB595, 2SB995, BD244C, BD540C, BD802, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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