BDT96F Bipolar Transistor

Characteristics of BDT96F Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 32 W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220F

Pinout of BDT96F

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT96F is the BDT95F.

Replacement and Equivalent for BDT96F transistor

You can replace the BDT96F with the BDT96.
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