2SB1016-R Bipolar Transistor

Characteristics of 2SB1016-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1016-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1016-R transistor can have a current gain of 40 to 80. The gain of the 2SB1016 will be in the range from 40 to 240, for the 2SB1016-O it will be in the range from 70 to 140, for the 2SB1016-Y it will be in the range from 120 to 240.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1016-R might only be marked "B1016-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1016-R is the 2SD1407-R.

SMD Version of 2SB1016-R transistor

The BDP954 (SOT-223) is the SMD version of the 2SB1016-R transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1016-R transistor

You can replace the 2SB1016-R with the 2SA1010, 2SA1010M, 2SB1367, 2SB1367-R, 2SB595, 2SB595-R, 2SB995, 2SB995-R, BD244C, BD540C, BD712, BD744C, BD802, BD912, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, KSA1010, KSA1010R, KTB1367, KTB1367R, MJE15029, MJE15029G, MJE15031, MJE15031G, MJE5170, MJE5171, MJE5172, MJF15031 or MJF15031G.
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