BDT96 Bipolar Transistor

Characteristics of BDT96 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 20 to 200
  • Transition Frequency, min: 4 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BDT96

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDT96 is the BDT95.

Replacement and Equivalent for BDT96 transistor

You can replace the BDT96 with the BDT96F.
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