2SB703A Bipolar Transistor

Characteristics of 2SB703A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 200
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB703A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB703A transistor can have a current gain of 40 to 200. The gain of the 2SB703A-Q will be in the range from 100 to 200, for the 2SB703A-R it will be in the range from 60 to 120, for the 2SB703A-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB703A might only be marked "B703A".

Complementary NPN transistor

The complementary NPN transistor to the 2SB703A is the 2SD743A.

SMD Version of 2SB703A transistor

The BDP954 (SOT-223) is the SMD version of the 2SB703A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB703A transistor

You can replace the 2SB703A with the 2SA1010, 2SB1016, 2SB1090, 2SB1367, 2SB595, 2SB995, BD244C, BD540C, BD802, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, KSA1010, KTB1367, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
If you find an error please send an email to mail@el-component.com