2SB1090-M Bipolar Transistor

Characteristics of 2SB1090-M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB1090-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1090-M transistor can have a current gain of 40 to 80. The gain of the 2SB1090 will be in the range from 40 to 200, for the 2SB1090-K it will be in the range from 100 to 200, for the 2SB1090-L it will be in the range from 80 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1090-M might only be marked "B1090-M".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1090-M is the 2SD1568-M.

SMD Version of 2SB1090-M transistor

The BDP954 (SOT-223) is the SMD version of the 2SB1090-M transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1090-M transistor

You can replace the 2SB1090-M with the 2N6475, 2N6476, 2SA1010, 2SA1010M, 2SB1016, 2SB1016-R, 2SB1367, 2SB1367-R, 2SB595, 2SB595-R, 2SB703A, 2SB703A-S, 2SB995, 2SB995-R, BD244C, BD540C, BD712, BD744C, BD802, BD912, BD954, BD956, BDT86, BDT86F, BDT88, BDT88F, BDT96, BDT96F, KSA1010, KSA1010R, KTB1367, KTB1367R, MJE15029, MJE15029G, MJE15031, MJE15031G, MJE5170, MJE5171, MJE5172, MJF15031, MJF15031G or NTE292.
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