2SB546A-M Bipolar Transistor

Characteristics of 2SB546A-M Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -200 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -2 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 40 to 80
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB546A-M

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB546A-M transistor can have a current gain of 40 to 80. The gain of the 2SB546A will be in the range from 40 to 200, for the 2SB546A-K it will be in the range from 100 to 200, for the 2SB546A-L it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB546A-M might only be marked "B546A-M".

Complementary NPN transistor

The complementary NPN transistor to the 2SB546A-M is the 2SD401A-M.

Replacement and Equivalent for 2SB546A-M transistor

You can replace the 2SB546A-M with the 2SB546, 2SB546-R, 2SB547, 2SB630, 2SB630-S, KSB546, KSB546-R, MJE15031, MJE15031G, MJE5172, MJE5850, MJE5850G, MJF15031 or MJF15031G.
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